AP3310GJ-HF Datasheet, PDF (1/6 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement, Simple Drive Requirement

Advanced Power
Electronics Corp.
AP3310GH/J-HF
RoHS-compliant Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ 2.5V Gate Drive Capability
▼ Fast Switching Characteristic
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
BV_DSS
R_DS(ON)
I_D
-20V
150mΩ
-10A
GD
S _TO-252(H)
This device is suited for low voltage and battery power applications.
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 4.5V
Continuous Drain Current, V_GS @ 4.5V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
G
D
S
TO-251(J)
Rating
- 20
+12
-10
-6.2
-24
25
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)³
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
5.0
62.5
110
Units
℃/W
℃/W
℃/W
Data and specifications subject to change without notice
1
200902096