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AP30T10GK-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic
Advanced Power
Electronics Corp.
AP30T10GK-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower Gate Charge
▼ Fast Switching Characteristic
G
▼ Halogen Free & RoHS Compliant Product
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching,ruggedized device design,
low on-resistance and cost-effectiveness.
The SOT-223 package is designed for suface mount application,
larger heatsink than SO-8 and SOT package.
BVDSS
RDS(ON)
ID
100V
55mΩ
4.8A
D
SOT-223
S
D
G
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current3, VGS @ 10V
Drain Current3, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
100
V
+20
V
4.8
A
3.9
A
20
A
2.78
W
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
45
Units
℃/W
1
201501273