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AP30P10GI_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic | |||
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Advanced Power
Electronics Corp.
AP30P10GI
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
â¼ Lower Gate Charge
D
â¼ Simple Drive Requirement
â¼ Fast Switching Characteristic
â¼ RoHS Compliant & Halogen-Free
G
S
Description
AP30P10 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides
a high isolation voltage capability and low thermal resistance
between the tab and the external heat-sink.
BVDSS
RDS(ON)
ID3
-100V
80mΩ
-25A
G
D
S
TO-220CFM(I)
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25â
ID@TC=100â
IDM
PD@TC=25â
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current3, VGS @ 10V
Drain Current3, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
-100
V
+20
V
-25
A
-15
A
-80
A
31.3
W
-55 to 150
â
-55 to 150
â
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
4
65
Units
â/W
â/W
1
201412093
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