AP30N30WI Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power
Electronics Corp.
AP30N30WI
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ RoHS Compliant
G
S
Description
AP30N30 from APEC provide the designer with the best combination
of fast switching , low on-resistance and cost-effectiveness .
The TO-3PF fullpack eliminates the need for additional insulating
hardware in commercial-industrial applications.
BV_DSS
R_DS(ON)
I_D
250V
68mΩ
30A
G
D
S
TO-3PF
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_DM
P_D@T_C=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
E_AS
I_AR
T_STG
T_J
Single Pulse Avalanche Energy³
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
250
±30
30
120
83
0.7
450
30
-55 to 150
-55 to 150
Units
V
V
A
A
W
W/℃
mJ
A
℃
℃
Max.
Max.
Value
1.5
42
Units
℃/W
℃/W
Data and specifications subject to change without notice
201216053-1/4