AP30N30W Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power
Electronics Corp.
AP30N30W
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ RoHS Compliant
G
S
BV_DSS
R_DS(ON)
I_D
Description
AP30N30 from APEC provide the designer with the best combination of fast
switching , low on-resistance and cost-effectiveness .
The TO-3P package is preferred for commercial & industrial applications
with higher power level preclusion than TO-220 device.
GD
S
250V
68mΩ
36A
TO-3P
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
E_AS
I_AR
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy³
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
250
±30
36
23
144
208
1.7
450
30
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
℃
℃
Max.
Max.
Value
0.6
40
Units
℃/W
℃/W
Data and specifications subject to change without notice
200916052-1/4