AP30G120SW Datasheet, PDF(1/3 Page) Alpha & Omega Semiconductors – N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD

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AP30G120SW Datasheet, PDF (1/3 Pages) Alpha & Omega Semiconductors – N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD

Advanced Power

Electronics Corp.

AP30G120SW

RoHS-compliant Product

N-CHANNEL INSULATED GATE

BIPOLAR TRANSISTOR WITH FRD.

Features

â¼ High Speed Switching

â¼ Low Saturation Voltage

VCE(sat)=3.0V@IC=30A

â¼ CO-PAK, IGBT With FRD

â¼ RoHS Complian

Absolute Maximum Ratings

Symbol

Parameter

VCES

VGE

IC@TC=25â

IC@TC=100â

ICM

IF@TC=25â

IF@TC=100â

Collector-Emitter Voltage

Gate-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current1

Diode Forward Current

IFM

PD@TC=25â

Diode Pulse Forward Current

Maximum Power Dissipation

TSTG

Storage Temperature Range

Operating Junction Temperature Range

Maximum Lead Temp. for Soldering Purposes

, 1/8" from case for 5 seconds .

TO-3P

VCES

Rating

1200

+30

120

208

-55 to 150

300

1200V

30A

Units

Notes:

1.Pulse width limited by max . junction temperature .

Thermal Data

Symbol

Parameter

Rthj-c(IGBT) Thermal Resistance Junction-Case

Rthj-c(Diode) Thermal Resistance Junction-Case

Rthj-a

Thermal Resistance Junction-Ambient

Value

0.6

1.5

Units

â/W

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min. Typ. Max. Units

IGES

Gate-to-Emitter Leakage Current

VGE=+30V, VCE=0V

- +500 nA

ICES

Collector-Emitter Leakage Current

VCE=1200V, VGE=0V

1 mA

VCE(sat)

Collector-Emitter Saturation Voltage

VGE=15V, IC=30A

3 3.6 V

VGE=15V, IC=60A

- 3.8 -

VGE(th)

Gate Threshold Voltage

VCE=VGE, IC=250uA

Total Gate Charge

IC=30A

63 100 nC

Qge

Gate-Emitter Charge

VCC=500V

Qgc

Gate-Collector Charge

td(on)

Turn-on Delay Time

Rise Time

td(off)

Turn-off Delay Time

Fall Time

Eon

Turn-On Switching Loss

VGE=15V

VCC=600V,

Ic=30A,

VGE=15V,

RG=5â¦,

Inductive Load

- 125 - ns

- 430 860 ns

- 1.3 - mJ

Eoff

Turn-Off Switching Loss

- 3.1 - mJ

Cies

Input Capacitance

VGE=0V

- 1400 2240 pF

Coes

Output Capacitance

VCE=30V

- 120 - pF

Cres

Reverse Transfer Capacitance

f=1.0MHz

Electrical Characteristics of Diode@Tj=25â(unless otherwise specified)

Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

IF=10A

IF=20A

IF=10A

di/dt = 100 A/Âµs

- 1.7 2.5 V

- 2.1 2.9 V

- 140 - ns

- 0.8 - uC

Data and specifications subject to change without notice

201211302

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