AP30G120BSW-HF Datasheet, PDF(1/4 Page) Advanced Power Electronics Corp. – N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD

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AP30G120BSW-HF Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD

Advanced Power

Electronics Corp.

AP30G120BSW-HF

Halogen-Free Product

N-CHANNEL INSULATED GATE

BIPOLAR TRANSISTOR WITH FRD.

Features

â¼ High Speed Switching

â¼ Low Saturation Voltage

VCE(sat)=2.9V@IC=30A

â¼ CO-PAK, IGBT With FRD

â¼ RoHS Compliant & Halogen-Free

TO-3P

Absolute Maximum Ratings

Symbol

Parameter

VCES

Collector-Emitter Voltage

VGE

IC@TC=25â

IC@TC=100â

ICM

IF@TC=25â

Gate-Emitter Voltage

Collector Current

Pulsed Collector Current1

Diode Forward Current

IFM

PD@TC=25â

TSTG

Diode Pulse Forward Current

Maximum Power Dissipation

Storage Temperature Range

Operating Junction Temperature Range

Maximum Lead Temp. for Soldering Purposes

, 1/8" from case for 5 seconds .

VCES

Rating

1200

+30

120

208

-55 to 150

300

1200V

30A

Units

Notes:

1.Pulse width limited by max . junction temperature .

Thermal Data

Symbol

Parameter

Rthj-c(IGBT) Thermal Resistance Junction-Case

Rthj-c(Diode) Thermal Resistance Junction-Case

Rthj-a

Thermal Resistance Junction-Ambient

Value

0.6

Units

â/W

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min. Typ. Max. Units

IGES

ICES

VCE(sat)

Gate-to-Emitter Leakage Current

Collector-Emitter Leakage Current

Collector-Emitter Saturation Voltage

VGE=+30V, VCE=0V

VCE=1200V, VGE=0V

VGE=15V, IC=30A

VGE=15V, IC=60A

- +500 nA

1 mA

- 2.7 3.4 V

- 3.7 -

VGE(th)

Gate Threshold Voltage

VCE=VGE, IC=250uA

Total Gate Charge

IC=30A

- 63 100 nC

Qge

Gate-Emitter Charge

VCC=500V

- 12 - nC

Qgc

Gate-Collector Charge

VGE=15V

- 32 - nC

td(on)

Turn-on Delay Time

Rise Time

td(off)

Turn-off Delay Time

Fall Time

VCC=600V,

Ic=30A,

VGE=15V,

RG=5â¦,

Inductive Load

- 40 - ns

- 45 - ns

- 125 - ns

- 430 860 ns

Eon

Turn-On Switching Loss

- 1.3 - mJ

Eoff

Turn-Off Switching Loss

- 3.1 - mJ

Cies

Input Capacitance

VGE=0V

- 1400 2240 pF

Coes

Output Capacitance

VCE=30V

- 120 - pF

Cres

Reverse Transfer Capacitance

f=1.0MHz

- 15 - pF

Electrical Characteristics of Diode@Tj=25â(unless otherwise specified)

Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

IF=8A

di/dt = 100 A/Âµs

- 2.5 3.2 V

- 70 - ns

- 170 - nC

Data and specifications subject to change without notice

201107251

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