|
AP2R803GS-HF_14 Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Low On-resistance | |||
|
Advanced Power
Electronics Corp.
AP2R803GS-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
â¼ Low On-resistance
D
â¼ Simple Drive Requirement
â¼ Fast Switching Characteristic
G
â¼ RoHS Compliant & Halogen-Free
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low â¡on-
resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited for
high current application due to the low connection resistance.
BVDSS
RDS(ON)
ID
G DS
30V
2.8mâ¦
80A
TO-263(S)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25â
ID@TC=100â
IDM
PD@TC=25â
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current4
Continuous Drain Current4
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
80
80
300
104
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
â
â
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Data & specifications subject to change without notice
Value
1.2
40
Units
â/W
â/W
1
201210121
|
▷ |