|
AP2R803GMT-HF_14 Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement | |||
|
Advanced Power
Electronics Corp.
AP2R803GMT-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
â¼ Simple Drive Requirement
D
â¼ SO-8 Compatible
â¼ Low On-resistance
G
â¼ RoHS Compliant & Halogen-Free
S
Description
Advanced Power MOSFETs from APEC provide the
â¡
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The PMPAK® 5x6 package is special for DC-DC converters application
and the foot print is compatible with SO-8 with backside heat sink.
BVDSS
RDS(ON)
ID
30V
3mΩ
105A
D
D
D
D
S
S
S
G
PMPAK® 5x6
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25â
ID@TA=25â
ID@TA=70â
IDM
PD@TC=25â
PD@TA=25â
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip), VGS @ 10V
Continuous Drain Current3, VGS @ 10V
Continuous Drain Current3, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
105
33
26.5
240
50
5
45
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Value
2.5
25
Units
V
V
A
A
A
A
W
W
mJ
â
â
Units
â/W
â/W
Data & specifications subject to change without notice
1
201103021
|
▷ |