AP2R803GM-HF Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Lower On-resistance, Simple Drive Requirement

Advanced Power
Electronics Corp.
AP2R803GM-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
D
D
D
D
SO-8
G
SS
S
BV_DSS
R_DS(ON)
I_D
Description
AP2R803 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast _G
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The SO-8 package is widely preferred for all commercial-industrial surface
mount applications using infrared reflow technique and suited for voltage
conversion or switch applications.
30V
3.2mΩ
22.8A
D
S
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³, V_GS @ 10V
Continuous Drain Current³, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+12
22.8
18.3
80
2.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
50
Unit
℃/W
1
201212111