AP28G45GEM Datasheet, PDF (1/3 Pages) Advanced Power Electronics Corp. – N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Advanced Power
Electronics Corp.
AP28G45GEM
Pb Free Plating Product
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
▼ High Input Impedance
▼ High Pick Current Capability
▼ 3.3V Gate Drive
▼ Strobe Flash Applications
C
C
C
C
SO-8
G
E
E
E
V_CE
I_CP
G
450V
130A
C
E
Absolute Maximum Ratings
Symbol
Parameter
V_CE
V_GE
I_GEP
I_CP
P_D@T_C=25℃¹
T_STG
T_J
Collector-Emitter Voltage
Gate-Emitter Voltage
Pulsed Gate-Emitter Voltage
Pulsed Collector Current, V_GE @ 3.3V
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
450
±6
±8
130
2.5
-55 to 150
-55 to 150
Units
V
V
V
A
W
℃
℃
Electrical Characteristics@T_j=25^oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max.
I_GES
Gate-Emitter Leakage Current
V_GE=± 6V, V_CE=0V
I_CES
Collector-Emitter Leakage Current V_CE=450V, V_GE=0V
-
-
10
-
-
10
V_CE(sat)
V_GE(th)
Q_g
Q_ge
Q_gc
t_d(on)
t_r
t_d(off)
t_f
C_ies
C_oes
Collector-Emitter Saturation Voltage
Gate Threshold Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
V_GE=3.3V, I_CP=130A (Pulsed)
V_CE=V_GE, I_C=250uA
I_C=40A
V_CE=360V
V_GE=4.5V
V_CC=200V
I_C=15A
R_G=10Ω
V_GE=5V
V_GE=0V
V_CE=25V
- 3.8 6
-
-
1
-
74 120
-
8
-
-
34
-
-
20
-
- 100 -
- 400 -
-
3
-
- 3020 4830
- 220 -
C_res
Rth_JA1
Reverse Transfer Capacitance f=1.0MHz
Thermal Resistance Junction-Ambient
-
50
-
-
-
50
Units
uA
uA
V
V
nC
nC
nC
ns
ns
ns
µs
pF
pF
pF
℃/W
Notes:
1.Surface mounted on 1 in² copper pad of FR4 board ; 125℃/W when mounted on Min. copper pad.
Data and specifications subject to change without notice
201117031