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| AP28G40GEO Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |||
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Advanced Power
Electronics Corp.
AP28G40GEO
RoHS-compliant Product
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
â¼ High Input Impedance
â¼ High Peak Current Capability
â¼ Low Gate Drive
â¼ Strobe Flash Applications
C
C
C
C
TSSOP-8
G
E
E
E
VCE
ICP
G
400V
150A
C
E
Absolute Maximum Ratings
Symbol
Parameter
VCE
VGEP
ICP
PD@TA=25â1
TSTG
TJ
Collector-Emitter Voltage
Peak Gate-Emitter Voltage
Pulsed Collector Current, VGE @ 2.5V
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
400
±6
150
1
-55 to 150
150
Units
V
V
A
W
â
â
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ.
IGES
Gate-Emitter Leakage Current VGE=± 6V, VCE=0V
-
-
ICES
Collector-Emitter Leakage Current VCE=400V, VGE=0V
-
-
VCE(sat)
Collector-Emitter Saturation Voltage VGE=2.5V, ICP=150A (Pulsed)
- 5.2
VGE(th)
Gate Threshold Voltage
VCE=VGE, IC=250uA
0.3 -
Qg
Total Gate Charge
IC=40A
-
76
Qge
Gate-Emitter Charge
VCE=200V
-
4
Qgc
Gate-Collector Charge
VGE=4V
-
26
td(on)
Turn-on Delay Time
VCC=320V
- 220
tr
Rise Time
td(off)
Turn-off Delay Time
IC=160A
RG=10Ω
- 800
- 1.6
tf
Fall Time
VGE=4V
- 1.5
Cies
Input Capacitance
VGE=0V
- 4485
Coes
Output Capacitance
VCE=30V
-
44
Cres
RthJA1
Reverse Transfer Capacitance f=1.0MHz
Thermal Resistance Junction-Ambient
-
40
-
-
Max.
±10
10
9
1.2
130
-
-
-
-
-
-
8240
-
-
125
Units
uA
uA
V
V
nC
nC
nC
ns
ns
µs
µs
pF
pF
pF
â/W
Notes:
1.Surface mounted on 1 in2 copper pad of FR4 board, t=10s.
Data and specifications subject to change without notice
1
200805306
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