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| AP28G40GEM-HF_16 Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – High Peak Current Capability | |||
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Advanced Power
Electronics Corp.
AP28G40GEM-HF
Halogen-Free Product
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
â¼ High Input Impedance
â¼ High Peak Current Capability
â¼ Low Gate Drive
â¼ Strobe Flash Applications
â¼ RoHS Compliant & Halogen-Free
C
C
C
C
SO-8
VCE
ICP
G
E
EE
G
400V
150A
C
E
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VCE
Collector-Emitter Voltage
400
V
VGEP
Peak Gate-Emitter Voltage
+6
V
ICP
Pulsed Collector Current, VGE @ 3V
150
A
PD@TA=25â1
Maximum Power Dissipation
1
W
TSTG
Storage Temperature Range
-55 to 150
oC
TJ
Operating Junction Temperature Range
150
oC
.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
IGES
ICES
VCE(sat)
VGE(th)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Cies
Coes
Cres
RthJA1
Gate-Emitter Leakage Current VGE=+6V, VCE=0V
Collector-Emitter Leakage Current VCE=400V, VGE=0V
Collector-Emitter Saturation Voltage
Gate Threshold Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
VGE=3V, ICP=150A (Pulsed)
VCE=VGE, IC=250uA
IC=40A
VCE=200V
VGE=4V
VCC=320V
IC=160A
RG=10Ω
VGE=4V
VGE=0V
VCE=30V
Reverse Transfer Capacitance f=1.0MHz
Thermal Resistance Junction-Ambient
-
- +30 uA
-
- 25 uA
-
3.6 9
V
0.3 - 1.2 V
-
86 138 nC
-
2
- nC
-
23
-
nC
- 220 -
ns
- 800 -
ns
-
1.6
-
µs
-
1.5
-
µs
- 5100 8160 pF
-
38
-
pF
-
27
-
pF
-
- 125 oC/W
Notes:
1.Surface mounted on Min. copper pad of FR4 board.
Data and specifications subject to change without notice
1
201502252
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