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AP2762S-A-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristics
Advanced Power
Electronics Corp.
▼ 100% Avalanche Test
▼ Fast Switching Characteristics
▼ Simple Drive Requirement
G
▼ RoHS Compliant & Halogen-Free
AP2762S-A-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BVDSS
650V
RDS(ON)
1.4Ω
ID
7A
S
Description
AP2762 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-263 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow technique
and suited for high current application due to the low connection
resistance.
G D S TO-263(S)
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
650
V
VGS
ID@TC=25℃
IDM
PD@TC=25℃
EAS
Gate-Source Voltage
Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Single Pulse Avalanche Energy2
+30
V
7
A
24
A
92.6
W
18
mJ
IAR
TSTG
TJ
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
6
A
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Data & specifications subject to change without notice
Value
1.35
40
Unit
℃/W
oC/W
1
201501222