AP2761P-A Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power
Electronics Corp.
AP2761P-A
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On-resistance
D
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
▼ RoHS Compliant
G
S
Description
The TO-220 package is universally preferred for all commercial-
industrial applications. The device is suited for DC-DC ,AC-DC
converters for power applications.
BV_DSS
R_DS(ON)
I_D
650V
1Ω
10A
G
D
S
TO-220
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
I_AR
T_STG
T_J
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
650
±30
10
4.4
18
104
0.8
10
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
A
℃
℃
Max.
Max.
Value
1.2
62
Units
℃/W
℃/W
Data & specifications subject to change without notice
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