|
AP2732GK Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
|
Advanced Power
Electronics Corp.
AP2732GK
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
â¼ Simple Drive Requirement
â¼ Lower Gate Charge
â¼ Fast Switching Characteristic
â¼ RoHS Compliant
Description
D
SOT-223
S
D
G
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
BVDSS
RDS(ON)
ID
30V
26mΩ
8.6A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25â
ID@TA=70â
IDM
PD@TA=25â
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
Storage Temperature Range
TJ
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
30
±20
8.6
6.8
30
2.7
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/â
â
â
Max.
Value
45
Unit
â/W
Data and specifications subject to change without notice
200526051-1/4
|
▷ |