AP2625GY-HF_14 Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Low Gate Charge

Advanced Power
Electronics Corp.
AP2625GY-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
▼ Capable of 2.5V Gate Drive
▼ Surface Mount Package
▼ RoHS Compliant & Halogen-Free
D2
S1
D1
SOT-26
G2
S2
G1
BV_DSS
R_DS(ON)
I_D
-30V
185mΩ
- 2A
Description
D1
D2
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device.
G1
G2
The SOT-26 package is widely used for commercial-industrial
applications.
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
-30
+12
-2.0
-1.6
-20
1.2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
110
Unit
℃/W
1
201301174