AP2622GY_12 Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Low Gate Charge, Small Package Outline

Advanced Power
Electronics Corp.
AP2622GY
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D1
D2
▼ Small Package Outline
▼ Surface Mount Package ^G1
G2
▼ RoHS Compliant
Description
S2
S1
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and cost-
effectiveness device.
The SOT-26 package is widely used for all commercial-industrial
applications.
BV_DSS
R_DS(ON)
I_D
50V
1.8Ω
520mA
D2
S1
D1
SOT-26
G2
S2
G1
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³, V_GS @ 10V
Continuous Drain Current³, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Rating
50
+20
520
410
1.5
0.8
0.006
-55 to 150
-55 to 150
Units
V
V
mA
mA
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
150
Unit
℃/W
1
201204063