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AP2622GY Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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Advanced Power
Electronics Corp.
AP2622GY
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
â¼ Low Gate Charge
â¼ Small Package Outline
D1
D2
â¼ Surface Mount Package
G1
G2
â¼ RoHS Compliant
S1
S2
Description
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-26 package is universally used for all commercial-industrial
applications.
BVDSS
RDS(ON)
ID
50V
1.8Ω
520mA
D2
S1
D1
SOT-26
G2
S2
G1
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25â
ID@TA=70â
IDM
PD@TA=25â
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS @ 10V
Continuous Drain Current3, VGS @ 10V
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
50
±20
520
410
1.5
0.8
0.006
-55 to 150
-55 to 150
Units
V
V
mA
mA
A
W
W/â
â
â
Max.
Value
150
Unit
â/W
Data and specifications subject to change without notice
200624051-1/4
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