AP2622GY-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Small Package Outline

Advanced Power
Electronics Corp.
AP2622GY-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
▼ Small Package Outline
▼ Surface Mount Package
▼ RoHS Compliant
D2
S1
D1
SOT-26
G2
S2
G1
BV_DSS
R_DS(ON)
I_D
Description
D1
AP2622 series are from Advanced Power innovated
design and silicon process technology to achieve the
lowest possible on-resistance and fast switching
G1
G2
performance. It provides the designer with an extreme
efficient device for use in a wide range of power
applications.
S1
The SOT-26 package is widely used for all commercial-
industrial applications.
50V
1.8Ω
520mA
D2
S2
Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
Drain-Source Voltage
Gate-Source Voltage
Drain Current³, V_GS @ 10V
Drain Current³, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
50
+20
520
410
1.5
0.8
0.006
V
V
mA
mA
A
W
W/℃
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
150
Unit
℃/W
1
201501224