AP2614GY-HF Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Capable of 2.5V Gate Drive, Lower On-resistance

Advanced Power
Electronics Corp.
AP2614GY-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 2.5V Gate Drive
▼ Lower On-resistance
▼ Surface Mount Package
▼ RoHS Compliant & Halogen-Free
S
D
D
SOT-26
G
D
D
BV_DSS
R_DS(ON)
I_D
Description
AP2614 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
G
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The SOT-26 package is widely used for all commercial-industrial
applications.
20V
25mΩ
7.2A
D
S
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³, V_GS @ 4.5V
Continuous Drain Current³, V_GS @ 4.5V
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
20
+12
7.2
5.8
30
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
62.5
Unit
℃/W
1
201209241