AP2612GY-HF Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Capable of 1.8V Gate Drive, Simple Drive Requirement

Advanced Power
Electronics Corp.
AP2612GY-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 1.8V Gate Drive
▼ Simple Drive Requirement
▼ Surface Mount Device
▼ RoHS Compliant
S
D
D
SOT-26
G
D
D
BV_DSS
R_DS(ON)
I_D
Description
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The S0T-26 package is widely used for commercial-industrial surface
G
mount applications.
30V
35mΩ
6A
D
S
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³, V_GS @ 4.5V
Continuous Drain Current³, V_GS @ 4.5V
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+8
6
4.7
20
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
62.5
Unit
℃/W
1
201103241