AP2611GYT-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – RoHS Compliant & Halogen-Free

Advanced Power
Electronics Corp.
AP2611GYT-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 2.5V Gate Drive
D
▼ Small Size & Lower Profile
▼ RoHS Compliant & Halogen-Free
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The PMPAK^® 3x3 package is special for DC-DC converters application
and lower 1.0mm profile with backside heat sink.
BV_DSS
R_DS(ON)
I_D
-20V
9mΩ
-15.4A
D
D
D
D
S
S
S
G
PMPAK^® 3x3
Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Drain Current³, V_GS @ 4.5V
Drain Current³, V_GS @ 4.5V
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
-20
V
+12
V
-15.4
A
-12.3
A
-50
A
3.12
W
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
5
40
Unit
℃/W
℃/W
1
201501222