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AP2609GYT-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement
Advanced Power
Electronics Corp.
AP2609GYT-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Small Size & Lower Profile
▼ RoHS Compliant & Halogen-Free
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The PMPAK ® 3 x 3 package is special for DC-DC converters
application and lower 1.0mm profile with backside heat sink.
BVDSS
RDS(ON)
ID
-20V
18mΩ
-11.3A
D
D
D
D
S
S
S
G
PMPAK® 3x3
Absolute
Symbol
Maximum
RatingPsa@ramTejt=er25o.C(unless
otherwise specified)
Rating
Units
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current3, VGS @ 4.5V
Drain Current3, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
-20
V
+8
V
-11.3
A
-9
A
-40
A
3.57
W
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
6
35
Unit
℃/W
℃/W
1
201411202