 English |
|
|
|
|
|
|
|
| AP2606CMT Datasheet, PDF (1/6 Pages) Advanced Power Electronics Corp. – SO-8 Compatible with Heatsink | |||
| |||
|
Advanced Power
Electronics Corp.
AP2606CMT
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
â¼ Simple Drive Requirement
D
â¼ SO-8 Compatible with Heatsink
â¼ Ultra Low On-resistance
â¼ RoHS Compliant & Halogen-Free
G
S
Description
AP2606C series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The PMPAK ® 5x6 package is special for DC-DC converters
application and the foot print is compatible with SO-8 with backside
heat sink and lower profile.
BVDSS
RDS(ON)
ID4
25V
0.8mΩ
280A
D
D
D
D
S
S
S
G
PMPAK® 5x6
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
. Parameter
Rating
Units
VDS
Drain-Source Voltage
25
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25â
Drain Current (Chip), VGS @ 10V4
280
A
ID@TC=25â
Drain Current, VGS @ 10V4(Package Limited)
100
A
ID@TA=25â
Drain Current, VGS @ 10V3
60
A
ID@TA=70â
Drain Current, VGS @ 10V3
50.5
A
IDM
Pulsed Drain Current1
650
A
PD@TC=25â
PD@TA=25â
EAS
Total Power Dissipation
Total Power Dissipation3
Single Pulse Avalanche Energy5
104
W
5
W
45
mJ
TSTG
Storage Temperature Range
-55 to 150
â
TJ
Operating Junction Temperature Range
-55 to 150
â
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
1.2
25
Unit
â/W
â/W
1
201507091
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese