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| AP2604CDT Datasheet, PDF (1/6 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement | |||
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Advanced Power
Electronics Corp.
AP2604CDT
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
â¼ Simple Drive Requirement
â¼ 100% Rg & UIS Test
â¼ Ultra Low On-resistance
â¼ RoHS Compliant & Halogen-Free
G
Description
AP2604C series are from Advanced Power innovated
design and silicon process technology to achieve the lowest
possible on-resistance and fast switching performance. It
provides the designer with an extreme efficient device for
use in a wide range of power applications.
D
BVDSS
RDS(ON)
ID4
25V
0.65mΩ
375A
S
PDFN 5x6
D DDD
The PDFN 5x6 package used advanced package and
silicon combination for ultra low on-resistance and high
efficiency, special for DC-DC converters application and the
foot print is compatible with SO-8 with backside heat sink
and lower profile.
GS S S
Bottom View
Top View
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
25
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25â
Drain Current (Chip), VGS @ 10V4
375
A
ID@TC=25â
Drain Current, VGS @ 10V4(Package Limited)
100
A
ID@TA=25â
Drain Current, VGS @ 10V3
71
A
ID@TA=70â
Drain Current, VGS @ 10V3
57
A
IDM
Pulsed Drain Current1
650
A
PD@TC=25â
PD@TA=25â
EAS
Total Power Dissipation
Total Power Dissipation3
Single Pulse Avalanche Energy5
138.8
W
5
W
714
mJ
TSTG
Storage Temperature Range
-55 to 150
â
TJ
Operating Junction Temperature Range
-55 to 150
â
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
0.9
25
Unit
â/W
â/W
1
201508171
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