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| AP25G45GEM Datasheet, PDF (1/3 Pages) Advanced Power Electronics Corp. – N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |||
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Advanced Power
Electronics Corp.
AP25G45GEM
Pb Free Plating Product
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
â¼ High Input Impedance
â¼ High Pick Current Capability
â¼ 4.5V Gate Drive
â¼ Strobe Flash Applications
C
C
C
C
SO-8
G
E
E
E
VCE
ICP
G
450V
150A
C
E
Absolute Maximum Ratings
Symbol
Parameter
VCE
VGE
IGEP
ICP
PD@TC=25â1
TSTG
Collector-Emitter Voltage
Gate-Emitter Voltage
Pulsed Gate-Emitter Voltage
Pulsed Collector Current
Maximum Power Dissipation
Storage Temperature Range
TJ
Operating Junction Temperature Range
Rating
450
±6
±8
150
2.5
-55 to 150
-55 to 150
Units
V
V
V
A
W
â
â
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max.
IGES
Gate-Emitter Leakage Current
VGE=± 6V, VCE=0V
-
-
10
ICES
Collector-Emitter Leakage Current (Tj=25â)
VCE=450V, VGE=0V
-
-
10
VCE(sat)
Collector-Emitter Saturation Voltage VGE=4.5V, ICP=150A (Pulsed)
-
6
8
VGE(th)
Gate Threshold Voltage
VCE=VGE, IC=250uA
0.35 - 1.2
Qg
Total Gate Charge
IC=50A
- 64.5 -
Qge
Gate-Emitter Charge
VCE=360V
-
7
-
Qgc
Gate-Collector Charge
VGE=4.5V
-
30
-
td(on)
Turn-on Delay Time
VCC=225V
- 11.5 -
tr
Rise Time
td(off)
Turn-off Delay Time
IC=50A
RG=25Ω
- 24.5 -
- 150 -
tf
Fall Time
VGE=10V
- 3.3 -
Cies
Input Capacitance
VGE=0V
- 2227 -
Coes
Output Capacitance
VCE=25V
- 200 -
Cres
RthJA1
Reverse Transfer Capacitance f=1.0MHz
Thermal Resistance Junction-Ambient
-
79
-
-
-
50
Units
uA
uA
V
V
nC
nC
nC
ns
ns
ns
µs
pF
pF
pF
â/W
Notes:
1.Surface mounted on 1 in2 copper pad of FR4 board ; 125â/W when mounted on Min. copper pad.
Data and specifications subject to change without notice
200411031
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