AP2535GEY-HF_14 Datasheet, PDF (1/7 Pages) Advanced Power Electronics Corp. – Fast Switching Performance

Advanced Power
Electronics Corp.
AP2535GEY-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Capable of 1.8V Gate Drive
▼ Lower Gate Charge
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
S1
D1
SOT-26
D2
G2
S2
G1
Description
AP2535 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The SOT-26 package is widely used for commercial surface mount
applications.
N-CH
P-CH
G1
BV_DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
D1
G2
S1
20V
32mΩ
4.6A
-20V
80mΩ
-3.1A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-channel P-channel
20
-20
+8
+8
4.6
-3.1
3.7
-2.5
12
-12
1.13
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
110
Unit
℃/W
1
201206281