AP2533GY-HF Datasheet, PDF (1/7 Pages) Advanced Power Electronics Corp. – Low Gate Charge, Fast Switching Performance

Advanced Power
Electronics Corp.
AP2533GY-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Low Gate Charge
▼ Fast Switching Performance
D2
S1
D1
▼ Surface Mount Package
▼ RoHS Compliant & Halogen-Free _SOT-26
G2
S2
G1
Description
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
N-CH
P-CH
BV_DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
D1
The SOT-26 package is widely used for commercial surface mount
applications.
G1
G2
S1
16V
150mΩ
2.2A
-16V
320mΩ
-1.5A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-channel P-channel
16
-16
+8
+8
2.2
-1.5
1.8
-1.2
8.0
-6.0
1.14
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
110
Unit
℃/W
1
201008171