AP2532GY Datasheet, PDF (1/8 Pages) Advanced Power Electronics Corp. – Low Gate Charge, Fast Switching Performance

Advanced Power
Electronics Corp.
AP2532GY
RoHS-compliant Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Low Gate Charge
▼ Fast Switching Performance
▼ Surface Mount Package
D2
S1
D1
SOT-26
G2
S2
G1
Description
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device.
The SOT-26 package is widely used for commercial surface
mount applications.
N-CH
P-CH
BV_DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
30V
130mΩ
2.4A
-30V
250mΩ
-1.8A
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-channel P-channel
30
-30
±20
±20
2.4
-1.8
1.9
-1.4
10
-10
1.14
0.01
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Value
110
Units
V
V
A
A
A
W
W/℃
℃
℃
Unit
℃/W
Data and specifications subject to change without notice
201018074-1/7