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AP2531GY Datasheet, PDF (1/7 Pages) Advanced Power Electronics Corp. – N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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Advanced Power
Electronics Corp.
AP2531GY
Pb Free Plating Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
â¼ Low Gate Charge Drive
â¼ Low On-resistance
â¼ Surface Mount Package
â¼ RoHS Compliant
Description
D2
S1
D1
SOT-26
G2
S2
G1
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
D1
efficient and cost-effectiveness device.
The SOT-26 package is universally used for all commercial-industrial G1
applications.
G2
S1
16V
58mΩ
3.5A
-16V
125mΩ
-2.5A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25â
ID@TA=70â
IDM
PD@TA=25â
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
N-channel P-channel
16
-16
±8
±8
3.5
-2.5
2.8
-2
10
-10
1.14
0.01
-55 to 150
-55 to 150
Max.
Value
110
Units
V
V
A
A
A
W
W/â
â
â
Unit
â/W
Data and specifications subject to change without notice
200701051-1/7
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