English
Language : 

AP2531GY-HF_16 Datasheet, PDF (1/8 Pages) Advanced Power Electronics Corp. – RoHS Compliant & Halogen-Free
Advanced Power
Electronics Corp.
AP2531GY-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Capable of 1.8V Gate Drive
▼ Lower Gate Charge
▼ Surface Mount Package
▼ RoHS Compliant & Halogen-Free
S1
D1
SOT-26
D2
G2
S2
G1
Description
AP2531 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The SOT-26 package is widely used for all commercial-
industrial applications.
N-CH
P-CH
G1
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
G2
S1
16V
58mΩ
3.5A
-16V
125mΩ
-2.5A
D2
S2
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS
Drain-Source Voltage
16
-16
V
VGS
Gate-Source Voltage
+8
+8
V
ID@TA=25℃
Drain Current3 , VGS @ 4.5V
3.5
-2.5
A
ID@TA=70℃
IDM
Drain Current3 , VGS @ 4.5V
Pulsed Drain Current1
2.8
-2
A
10
-10
A
PD@TA=25℃
Total Power Dissipation
1.14
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
110
Unit
℃/W
1
201408295