AP2530GY Datasheet, PDF (1/7 Pages) Advanced Power Electronics Corp. – N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power
Electronics Corp.
AP2530GY
Pb Free Plating Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Low Gate Charge
▼ Low On-resistance
▼ Surface Mount Package
▼ RoHS Compliant
Description
D2
S1
D1
SOT-26
G2
S2
G1
N-CH
P-CH
BV_DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
D1
efficient and cost-effectiveness device.
The SOT-26 package is universally used for all commercial-industrial _G1
applications.
G2
S1
30V
72mΩ
3.3A
-30V
150mΩ
-2.3A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
Rating
N-channel P-channel
30
-30
±20
±20
3.3
-2.3
2.6
-1.8
10
-10
1.14
0.01
-55 to 150
-55 to 150
Max.
Value
110
Units
V
V
A
A
A
W
W/℃
℃
℃
Unit
℃/W
Data and specifications subject to change without notice
200425051-1/7