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AP2530GY-HF_16 Datasheet, PDF (1/8 Pages) Advanced Power Electronics Corp. – Surface Mount Package
Advanced Power
Electronics Corp.
AP2530GY-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Low Gate Charge
▼ Low On-resistance
▼ Surface Mount Package
▼ RoHS Compliant & Halogen-Free
S1
D1
SOT-26
D2
G2
S2
G1
Description
AP2530 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The SOT-26 package is widely used for all commercial-
industrial applications.
N-CH
P-CH
G1
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
G2
S1
30V
72mΩ
3.3A
-30V
150mΩ
-2.3A
D2
S2
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
30
-30
+20
+20
3.3
-2.3
2.6
-1.8
10
-10
1.14
0.01
V
V
A
A
A
W
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
110
Unit
℃/W
1
201501215