AP2530AGY-HF_16 Datasheet, PDF (1/8 Pages) Advanced Power Electronics Corp. – RoHS Compliant & Halogen-Free

Advanced Power
Electronics Corp.
AP2530AGY-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Low Gate Charge
▼ Fast Switching Performance
D2
S1
D1
▼ Surface Mount Package
▼ RoHS Compliant & Halogen-Free _SOT-26
G2
S2
G1
N-CH
P-CH
Description
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SOT-26 package is widely used for commercial surface mount
applications.
BV_DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
D1
G1
G2
S1
30V
72mΩ
3.3A
-30V
150mΩ
-2.3A
D2
S2
Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
V_DS
Drain-Source Voltage
30
-30
V
V_GS
Gate-Source Voltage
+20
+20
V
I_D@T_A=25℃
Continuous Drain Current³
3.3
-2.3
A
I_D@T_A=70℃
I_DM
Continuous Drain Current³
Pulsed Drain Current¹
2.7
-1.8
A
12
-10
A
P_D@T_A=25℃
Total Power Dissipation
1.136
W
T_STG
Storage Temperature Range
-55 to 150
℃
T_J
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
110
Unit
℃/W
1
201501212