AP2451GY-HF_14 Datasheet, PDF (1/7 Pages) Advanced Power Electronics Corp. – RoHS Compliant & Halogen-Free

Advanced Power
Electronics Corp.
AP2451GY-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Capable of 2.5V Gate Drive
▼ Lower on-resistance
▼ Surface Mount Package
D2
D2
D1
D1
▼ RoHS Compliant & Halogen-Free
2928-8
G2
S2
G1
S1
Description
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device.
N-CH
P-CH
BV_DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
D1
The 2928-8 J-lead package provides good on-resistance
performance and space saving like TSOP-6.
G1
G2
S1
20V
37mΩ
5A
-20V
75mΩ
-3.7A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-channel P-channel
20
-20
±12
±12
5
-3.7
4
-3
20
-20
1.38
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
90
Unit
℃/W
1
201201312