AP2434GN3-HF Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Bottom Exposed DFN, Low On-resistance

Advanced Power
Electronics Corp.
AP2434GN3-HF
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Bottom Exposed DFN
▼ Low On-resistance
▼ Small Size & Lower Profile
▼ RoHS Compliant & Halogen-Free
Description
Advanced Power MOSFETs from APEC provide the designer
with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The DFN 3x3 package is well suited for low current DC/DC
applications.
D2 D1
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³, V_GS @ 10V
Continuous Drain Current³, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
BV_DSS
R_DS(ON)
I_D
D1
G1
G2
S1
30V
18mΩ
10.5A
D2
S2
D1
D1
D2
D2
S1
G1
S2
G2
DFN 3x3
Rating
30
+20
10.5
8.4
30
3.1
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient³
Data & specifications subject to change without notice
Rating
40
Units
℃/W
1
201210042