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| AP2428GN3_14 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Bottom Exposed DFN | |||
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Advanced Power
Electronics Corp.
AP2428GN3
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
â¼ Bottom Exposed DFN
â¼ Low On-resistance
â¼ Lower Profile
D2
D2
D1
D1
S2
G2
DFN3*3 G1S1
BVDSS
RDS(ON)
ID
30V
27mΩ
5.5A
D2
D1
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25â
ID@TA=70â
IDM
PD@TA=25â
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
±10
5.5
4.4
20
1.25
0.01
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Value
100
Units
V
V
A
A
A
W
W/â
â
â
Unit
â/W
Data and specifications subject to change without notice
1
201120072
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