AP2426GEY-HF Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Capable of 2.5V Gate Drive, Lower on-resistance

Advanced Power
Electronics Corp.
AP2426GEY-HF
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Capable of 2.5V Gate Drive
▼ Lower on-resistance
D1/D2
▼ Surface Mount Package
▼ RoHS Compliant & Halogen-Free
2928-8
G2
S2
G1
S1
Description
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
BV_DSS
R_DS(ON)
I_D
D1
G1
G2
20V
26.5mΩ
6A
D2
The 2928-8 J-lead package provides good on-resistance
performance and space saving like TSOP-6.
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
20
+10
6
4.8
36
1.39
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
90
Unit
℃/W
1
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