AP2334GN_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Small Footprint & Low Profile Package

Advanced Power
Electronics Corp.
AP2334GN
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Fast Switching Characteristic
▼ Lower Gate Charge
▼ Small Footprint & Low Profile Package
▼ RoHS Compliant & Halogen-Free
D
BV_DSS
R_DS(ON)
I_D
S
SOT-23S _G
Description
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
G
efficient and cost-effectiveness device.
The SOT-23S package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
30V
28mΩ
5.4A
D
S
Absolute Maximum Ratings@T_j=25_.^oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
Drain-Source Voltage
30
V
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Gate-Source Voltage
Drain Current³, V_GS @ 10V
Drain Current³, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
+20
V
5.4
A
4.3
A
20
A
1.25
W
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance Junction-ambient³
Data and specifications subject to change without notice
Value
100
Unit
℃/W
1
201411282AP