AP2334GN-HF Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic, Lower Gate Charge

Advanced Power
Electronics Corp.
AP2334GN-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Fast Switching Characteristic
D
▼ Lower Gate Charge
▼ Small Footprint & Low Profile Package
▼ RoHS Compliant & Halogen-Free
Description
S
SOT-23 _G
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23 package is widely used for all commercial-industrial
applications.
BV_DSS
R_DS(ON)
I_D
G
30V
28mΩ
5.6A
D
S
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³, V_GS @ 10V
Continuous Drain Current³, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
5.6
4.5
20
1.38
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance Junction-ambient³
Data and specifications subject to change without notice
Value
90
Unit
℃/W
1
201008051