AP2332GEN-HF Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power
Electronics Corp.
AP2332GEN-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Small Package Outline
D
BV_DSS
R_DS(ON)
▼ Surface Mount Device
▼ Halogen Free & RoHS Compliant Product
S ^ID
SOT-23 G
Description
Advanced Power MOSFETs utilized advanced processing
G
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The special design SOT-23 package with good thermal performance
is widely preferred for all commercial-industrial surface mount
applications using infrared reflow technique and suited for voltage
conversion or switch applications.
600V
72Ω
51mA
D
S
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³, V_GS @ 10V
Continuous Drain Current³, V_GS @ 10V
Continuous Drain Current⁴, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
600
+32
51
41
68
300
0.5
-55 to 150
-55 to 150
Units
V
V
mA
mA
mA
mA
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
250
Unit
℃/W
1
201212131