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AP2322GN_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Surface Mount Package
Advanced Power
Electronics Corp.
AP2322GN
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 1.8V Gate Drive
D
▼ Small Package Outline
▼ Surface Mount Package
▼ RoHS Compliant & Halogen-Free
S
SOT-23S G
Description
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SOT-23S package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
G
20V
90mΩ
2.5A
D
S
Absolute Maximum Ratings@Tj=25.oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
20
V
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Gate-Source Voltage
Drain Current3, VGS @ 4.5V
Drain Current3, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
+8
V
2.5
A
2.0
A
10
A
0.833
W
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
150
Unit
℃/W
1
201411284AP