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AP2318BEN Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Performance
Advanced Power
Electronics Corp.
AP2318BEN
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 3.0V Gate Drive
D
▼ Lower Gate Charge
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
S
SOT-23S G
Description
AP2318B series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The SOT-23S package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such as
DC/DC converters.
BVDSS
RDS(ON)
ID
G
30V
1.5Ω
0.53A
D
S
Absolute Maximum Ratings@Tj=25.oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current3, VGS @ 4.5V
Drain Current3, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
30
V
+12
V
0.53
A
0.42
A
2
A
0.69
W
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
180
Unit
℃/W
1
201409102