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AP2313GN_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Surface Mount Device
Advanced Power
Electronics Corp.
AP2313GN
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 2.5V Gate Drive
D
▼ Small Package Outline
▼ Surface Mount Device
▼ RoHS Compliant & Halogen-Free
S
SOT-23S G
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
BVDSS
RDS(ON)
ID
G
The SOT-23S package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such as
DC/DC converters.
-20V
160mΩ
-2.5A
D
S
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-20
V
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Gate-Source Voltage
Drain Current3, VGS @ 4.5V
Drain Current3, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
+12
V
-2.5
A
-1.97
A
-10
A
0.83
W
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
150
Unit
℃/W
1
201411175AP