AP2306AGN-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Surface Mount Package

Advanced Power
Electronics Corp.
AP2306AGN-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 1.8V Gate Drive
▼ Lower On-resistance
D
BV_DSS
R_DS(ON)
▼ Surface Mount Package
▼ RoHS Compliant
I_D
S
SOT-23 _G
Description
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
G
efficient and cost-effectiveness device.
The SOT-23 package is widely used for all commercial-industrial
applications.
30V
35mΩ
5A
D
S
Absolute Maximum Ratings@T_j=25_.^oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Drain Current³, V_GS @ 4.5V
Drain Current³, V_GS @ 4.5V
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
30
V
+8
V
5
A
4
A
20
A
1.38
W
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance Junction-ambient³
Data and specifications subject to change without notice
Value
90
Unit
℃/W
1
201411073