AP2306AGEN-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Surface Mount Device

Advanced Power
Electronics Corp.
AP2306AGEN-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 2.5V Gate Drive
▼ Small Outline Package
▼ Surface Mount Device
▼ RoHS Compliant & Halogen-Free
D
S
SOT-23 G
BV_DSS
R_DS(ON)
I_D
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and cost-
effectiveness device.
G
The SOT-23 package is widely used for commercial-industrial applications.
30V
50mΩ
4.1A
D
S
Absolute Maximum Ratings@T_j=25^o_.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
Drain-Source Voltage
30
V
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Gate-Source Voltage
Drain Current³, V_GS @ 4.5V
Drain Current³, V_GS @ 4.5V
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
+6
V
4.1
A
3.3
A
16
A
1.38
W
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
90
Unit
℃/W
1
201411142