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AP20GT60W Datasheet, PDF (1/3 Pages) Advanced Power Electronics Corp. – N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Advanced Power
Electronics Corp.
AP20GT60W
RoHS-compliant Product
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
Features
▼ High Speed Switching
▼ Low Saturation Voltage
VCE(sat),typ.=1.8V@IC=20A
▼ RoHS Compliant Product
G
C
E
Absolute Maximum Ratings
Symbol
VCES
VGE
IC@TC=25oC
IC@TC=100oC
ICM
PD@TC=25oC
TSTG
TJ
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current1
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
C
TO-3P
VCES
IC
G
Rating
600
+20
40
20
160
125
-55 to 150
150
600V
20A
C
E
Units
V
V
A
A
A
W
℃
℃
Notes:
1.Pulse width limited by Max. junction temperature .
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-Case
Rthj-a
Thermal Resistance Junction-Ambient
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
IGES
ICES
VCE(sat)
VCE(sat)
VGE(th)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Cies
Coes
Cres
Parameter
Gate-to-Emitter Leakage Current
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Gate Threshold Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGE=+20V, VCE=0V
VCE=600V, VGE=0V
VGE=15V, IC=20A
VGE=15V, IC=35A
VCE=VGE, IC=250uA
IC=20A
VCE=480V
VGE=15V
VCE=480V,
Ic=20A,
VGE=15V,
RG=5Ω,
Inductive Load
VGE=0V
VCE=30V
f=1.0MHz
Value
1
40
Units
℃/W
℃/W
Min. Typ. Max. Units
-
- +100 nA
-
-
25 uA
- 1.8 2.5 V
-
2 2.7 V
2
-
6
V
- 100 160 nC
-
24
-
nC
-
40
-
nC
-
50
-
ns
-
20
-
ns
- 135 -
ns
- 190 380 ns
- 0.3 - mJ
- 0.9 - mJ
- 3400 5440 pF
-
75
-
pF
-
50
-
pF
Data and specifications subject to change without notice
1
201105102
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