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AP20G45EH Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL INSULATED GATE
AP20G45EH/J
Advanced Power
Electronics Corp.
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
Description
* High Input Impedance
* High Pick Current Capability
* 4.5V Gate Drive
* Strobe Flash Applications
G
C E TO-252(H)
G
C
E
TO-251(J)
VCES
ICP
G
Absolute Maximum Ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage
VGE
Gate-Emitter Voltage
IGEP
Pulsed Gate-Emitter Voltage
ICP
PD@TC=25℃
Pulsed Collector Current
Maximum Power Dissipation
TSTG
Storage Temperature Range
TJ
Operating Junction Temperature Range
Rating
450
±6
±8
130
20
-55 to 150
-55 to 150
450V
130A
C
E
Units
V
V
V
A
W
℃
℃
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max.
IGES
Gate-Emitter Leakage Current
VGE=6V, VCE=0V
-
-
10
ICES
Collector-Emitter Leakage Current (Tj=25℃)
VCE=450V, VGE=0V
-
-
10
VCE(sat)
Collector-Emitter Saturation Voltage VGE=4.5V, ICP=130A (Pulsed)
-
5
8
VGE(th)
Gate Threshold Voltage
VCE=VGE, IC=250uA
-
- 1.2
Qg
Total Gate Charge
IC=40A
-
51
-
Qge
Gate-Emitter Charge
VCE=300V
-
2
-
Qgc
Gate-Collector Charge
VGE=5V
- 5.4 -
td(on)
Turn-on Delay Time
VCC=200V
- 5.5 -
tr
Rise Time
td(off)
Turn-off Delay Time
IC=40A
RG=25Ω
-
72
-
- 640 -
tf
Fall Time
VGE=5V
- 2.6 -
Cies
Input Capacitance
VGE=0V
- 2095 -
Coes
Output Capacitance
VCE=25V
- 145 -
Cres
Reverse Transfer Capacitance f=1.0MHz
-
35
-
Rthj-c
Thermal Resistance Junction-Case
-
-
6
Units
uA
uA
V
V
nC
nC
nC
ns
ns
ns
us
pF
pF
pF
℃/W
Data and specifications subject to change without notice
200124032
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