AP1RA03GMT-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – SO-8 Compatible with Heatsink

Advanced Power
Electronics Corp.
AP1RA03GMT-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ SO-8 Compatible with Heatsink
▼ Low On-resistance
G
▼ RoHS Compliant & Halogen-Free
S
Description
AP1RA03 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The PMPAK ^® 5x6 package is special for DC-DC converters
application and the foot print is compatible with SO-8 with backside
heat sink and lower profile.
BV_DSS
R_DS(ON)
I_D
30V
1.59mΩ
185A
D
D
D
D
S
S
S
G
PMPAK^® 5x6
Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
V_GS
I_D@T_C=25℃
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Chip), V_GS @ 10V
Drain Current, V_GS @ 10V³
Drain Current, V_GS @ 10V³
Pulsed Drain Current¹
30
V
+20
V
185
A
46
A
36.7
A
300
A
P_D@T_C=25℃
P_D@T_A=25℃
E_AS
T_STG
T_J
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy⁴
Storage Temperature Range
Operating Junction Temperature Range
83.3
W
5
W
28.8
mJ
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient³
Data & specifications subject to change without notice
Value
1.5
25
Units
℃/W
℃/W
1
201501063